to-220 parameter l value unit drain-source voltage v dss 60 v drain current - continuous i d 50 a drain current - pulsed i dm 200 a gate-source voltage v gss 25 v power dissipation p d 120 w max. operating junction temperature t j 150 o c storage temperature t stg -55~150 o c FQP50N06 description parameter symbol test conditions min. typ. max. unit drain-source breakdown voltage bv dss v gs = 0v, i d =250 a 60 v zero gate voltage drain current i dss v ds =60v, v gs =0v 1.0 ua gate-body leakage current, forward i gssf v gs =25v, v ds =0v 100 na gate-body leakage current, reverse i gssr v gs = -25v, v ds =0v -100 na gate threshold voltage v gs(th) v ds = v gs , i d =250 a 2.0 4.0 v static drain-source on-resistance r ds(on) v gs = 10 v, i d = 25 a 18 22 m forward transconductance g fs v ds = 25 v, i d = 25 a 22 s drain-source diode forward voltage v sd v gs = 0 v, i s = 50 a 1.5 v 60v n-channel mosfet product specification these n-channel enhancement mode power field effect transistors are produced using fairchilds proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for low voltage applications such as automotive, dc/dc converters, and high efficiency switching for power management in portable and battery operated products. electrical characteristics absolute maximum ratings( ta = 25 c) o ( ta = 25 c) o tiger electronic co.,ltd
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